用于提高UTB GeOI pmosfet空穴迁移率的异质层提升(HELLO)技术

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2018-04-01 DOI:10.1109/VLSI-TSA.2018.8403822

W. Chang, T. Irisawa, H. Ishii, H. Hattori, N. Uchida, T. Maeda

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引用次数: 1

摘要

超薄体(UTB)绝缘体上锗(GeOI)衬底是利用先进的异质层提升(HELLO)技术制备的。HELLO技术可以有效地缓解UTB GeOI在Ge减薄过程中的厚度波动问题。因此，在UTB GeOI pmosfet中，众所周知的在缩放体厚度(tbody)时的空穴迁移率下降得到了抑制。通过低温电测量研究了UTB GeOI pmosfet中空穴迁移率增强的机理。利用HELLO技术制备的9 nm厚GeOI器件的空穴迁移率表现出较大的温度依赖性，表明厚度波动散射的释放。

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HEtero-layer-lift-off (HELLO) technology for enhanced hole mobility in UTB GeOI pMOSFETs

Ultra-thin-body (UTB) germanium-on-insulator (GeOI) substrates have been fabricated utilizing advanced HEtero- Layer-Lift-Off (HELLO) technology. HELLO technology is effective in mitigating thickness fluctuation issue in UTB GeOI during Ge thinning process. As a result, well-known hole mobility degradation while scaling body thickness (tbody) in UTB GeOI pMOSFETs has been suppressed. The mechanism of enhanced hole mobility in UTB GeOI pMOSFETs was also investigated through low temperature electrical measurement. The hole mobility in 9-nm-thick GeOI devices fabricated with HELLO technology showed larger temperature dependence, indicating the release of thickness fluctuation scattering.

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2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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