先进的锗MOSFET技术，具有高/spl kappa/栅极电介质和浅结

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309955

C. O. Chui, K. Saraswat

{"title":"先进的锗MOSFET技术，具有高/spl kappa/栅极电介质和浅结","authors":"C. O. Chui, K. Saraswat","doi":"10.1109/ICICDT.2004.1309955","DOIUrl":null,"url":null,"abstract":"Various advanced germanium (Ge) metal-oxide-semiconductor field-effect transistor (MOSFET) technologies with high-permittivity (high-/spl kappa/) gate dielectrics and shallow junctions have been demonstrated. Numerous novel Ge technologies on surface cleaning, gate dielectric, and dopant incorporation are presented In addition, we disclose an innovative self-aligned gate-last fabrication process not only to demonstrate functional Ge MOSFETs, but also to provide a vehicle to characterize many novel material integration schemes.","PeriodicalId":158994,"journal":{"name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Advanced germanium MOSFET technologies with high-/spl kappa/ gate dielectrics and shallow junctions\",\"authors\":\"C. O. Chui, K. Saraswat\",\"doi\":\"10.1109/ICICDT.2004.1309955\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Various advanced germanium (Ge) metal-oxide-semiconductor field-effect transistor (MOSFET) technologies with high-permittivity (high-/spl kappa/) gate dielectrics and shallow junctions have been demonstrated. Numerous novel Ge technologies on surface cleaning, gate dielectric, and dopant incorporation are presented In addition, we disclose an innovative self-aligned gate-last fabrication process not only to demonstrate functional Ge MOSFETs, but also to provide a vehicle to characterize many novel material integration schemes.\",\"PeriodicalId\":158994,\"journal\":{\"name\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2004.1309955\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2004.1309955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

各种先进的锗(Ge)金属氧化物半导体场效应晶体管(MOSFET)技术具有高介电常数(高/spl kappa/)栅极介质和浅结。此外，我们披露了一种创新的自对准栅末制造工艺，不仅展示了功能性的Ge mosfet，而且还提供了表征许多新型材料集成方案的载体。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Advanced germanium MOSFET technologies with high-/spl kappa/ gate dielectrics and shallow junctions

Various advanced germanium (Ge) metal-oxide-semiconductor field-effect transistor (MOSFET) technologies with high-permittivity (high-/spl kappa/) gate dielectrics and shallow junctions have been demonstrated. Numerous novel Ge technologies on surface cleaning, gate dielectric, and dopant incorporation are presented In addition, we disclose an innovative self-aligned gate-last fabrication process not only to demonstrate functional Ge MOSFETs, but also to provide a vehicle to characterize many novel material integration schemes.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

自引率

0.00%

发文量