具有倾斜离子注入(TII)的低成本亚光刻图像化

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2018-04-01 DOI:10.1109/VLSI-TSA.2018.8403865

Sangwan Kim, Peng Zheng, Kimihiko Kato, L. Rubin, T. Liu

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引用次数: 1

摘要

本文讨论了一种利用倾斜离子注入(TII)的亚光刻技术，作为摩尔定律的扩展方法。实验证明了该方法在定义自对准已有线性和非线性硬掩模特征的模式方面的适用性。此外，通过实验和蒙特卡罗过程模拟研究了其分辨率极限(< 10 nm)和线边缘粗糙度(LER)。

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Cost-efficient sub-lithographic patterning with tilted-ion implantation (TII)

A sub-lithographic patterning technique using tilted-ion implantation (TII) is discussed herein, as an approach for extending Moore's Law. Its suitability for defining patterns self-aligned to pre-existing linear and non-linear hard-mask features is demonstrated experimentally. In addition, its resolution limit (< 10 nm) and line- edge roughness (LER) are investigated via experiments as well as Monte Carlo process simulations.

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2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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