SOI mosfet中耦合自热效应的动态NBTI仿真

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-18 DOI:10.1109/IPFA.2016.7564244

Xiangbin Li, Chenyue Ma, Lining Zhang, F. Sun, Xinnan Lin, M. Chan

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引用次数: 1

摘要

提出了一种考虑NBTI和SHE在SOI p- mosfet中耦合效应的器件性能退化模拟方法。将NBTI模型和热网络植入HiSIM，并在瞬态仿真过程中进行瞬时参数更新。仿真结果表明，解耦仿真会导致不可忽略的误差。

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Dynamic NBTI simulation coupling with self-heating effect in SOI MOSFETs

A methodology for simulating the device performance degradation considering the coupling effect of NBTI and SHE in SOI p-MOSFETs is proposed. NBTI models and thermal network are implanted into HiSIM with instantaneous parameter update during the transient simulation. The simulation results show that decoupling simulation will lead to non-ignorable inaccuracy.

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来源期刊

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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