底填材料对无铅倒装芯片封装可靠性的影响

Jamin Ling, Tie Wang, M. Ying, T. Tessier, I. Shim
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引用次数: 4

摘要

在这项研究中,Sn/Ag/Cu - pb无锡膏被印刷并回流到一个4mm /spl倍/ 5mm的凸模金属化(UBM)下的Al/Ni(V)/Cu薄膜上,并使用四种不同的下填充材料封装在5mm /spl倍/ 6mm的LGA(陆地网格阵列)封装中,这些材料具有一系列不同的材料特性。然后在1、3和6个回流循环后检查包装,并进行各种标准包装可靠性测试。采用封装级有限元分析(FEA)模拟了不同温度循环(TC)或热冲击(TS)应变速率下焊料的蠕变应变。此外,利用扫描电镜和并发初等映射来表征UBM的完整性。有限元分析结果表明,高Tg和低热膨胀系数(CTE)的底填材料可以显著降低焊料在周期性应力漂移下的最大等效蠕变应变。该结论与实际包级可靠性结果一致。通过选择适当的下填特性,这种无铅倒装芯片封装在峰值温度为260/spl°C时通过了3次回流循环的湿度敏感等级(MSL-3),随后通过了TC 1500次循环,低温热冲击(LTS) 800 /spl次/和无偏高加速应力测试(UHAST) 168h。注意到的其他观察结果包括,在这些包组装回流之后,Cu几乎完全消耗了。在上述多次回流循环后,还发现Ni扩散到块状焊料中。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of underfill materials on Pb-free flip chip package reliability
In this study, Sn/Ag/Cu Pb-free solder paste was printed and reflowed onto a thin film Al/Ni(V)/Cu under bump metallization (UBM) on a 4mm /spl times/ 5mm die and, packaged in a 5mm /spl times/ 6mm LGA (land grid array) package using four different underfill materials with a range of different material properties. The packages were then examined after 1, 3 and 6 reflow cycles in addition to various standard package reliability tests. Package level Finite Element Analysis (FEA) was also conducted to simulate the solder creep strain under various strain rates of temperature cycling (TC) or thermal shock (TS) at. In addition, SEM and concurrent Elementary Mapping were used to characterize the integrity of the UBM. The FEA results show that underfill materials with a high Tg and a low coefficient of thermal expansion (CTE) could substantially minimize the solder's maximum equivalent creep strain under cyclical stress excursions. This conclusion was in agreement with actual package level reliability results. By selecting the appropriate underfill properties, this Pb-free flip chip package has passed moisture sensitivity level (MSL-3) with 3 reflow cycles at peak temperature of 260/spl deg/C, followed by TC 1500 cycles, low temperature thermal shock (LTS) 800 /spl times/ and unbiased highly accelerated stress test (UHAST) 168h. Additional observations noted include that the Cu was nearly completely consumed after these package assembly reflows. It was also found that Ni diffused into bulk solder after the aforementioned multiple reflow cycles.
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