微探测先进互连结构中介电孔隙率变化的力学效应

A. Hsing, H. Geisler, V. Ryan, M. Cheng, K. Machani, D. Breuer, M. Lehr, J. Paul, F. Iacopi, R. Dauskardt
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引用次数: 0

摘要

由于越来越多的多孔低k介电体,芯片封装相互作用已成为一个主要问题。在封装过程中,对脆弱的互连结构施加剪切应力。我们使用微探针测量系统来实验测量具有不同介电孔隙率的互连层在各种剪切载荷条件和宽温度范围下的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microprobing the mechanical effects of varying dielectric porosity in advanced interconnect structures
Chip-package interaction has become a major concern due to increasingly porous low-K dielectrics. During the packaging process, shear stresses are exerted on fragile interconnect structures. We use a microprobe metrology system to experimentally measure how interconnect stacks with different dielectric porosities behave under various shear loading conditions and a wide range of temperatures.
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