A. Hsing, H. Geisler, V. Ryan, M. Cheng, K. Machani, D. Breuer, M. Lehr, J. Paul, F. Iacopi, R. Dauskardt
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Microprobing the mechanical effects of varying dielectric porosity in advanced interconnect structures
Chip-package interaction has become a major concern due to increasingly porous low-K dielectrics. During the packaging process, shear stresses are exerted on fragile interconnect structures. We use a microprobe metrology system to experimentally measure how interconnect stacks with different dielectric porosities behave under various shear loading conditions and a wide range of temperatures.