Cobham先进电子解决方案SONOS非易失性存储器的SEL和TID表征

2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC) Pub Date : 2020-11-01 DOI:10.1109/REDW51883.2020.9325828

M. Von Thun, D. Bass, Radu Dumitru, Rex Anderson, Jack Benthem, Shaw Ashenafi

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引用次数: 0

摘要

Cobham Advanced Electronic Solutions基于SONOS的Nor Flash非易失性存储器已被设计、制造并表征为辐射效应。将介绍辐射效应的结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SEL and TID Characterization of a Cobham Advanced Electronic Solutions SONOS Nonvolatile Memory

A Cobham Advanced Electronic Solutions SONOS based Nor Flash non-volatile memory has been designed, manufactured, and characterized for radiation effects. The radiation effects results will be presented.

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来源期刊

2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)

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