一种提高BiCMOS工艺速度和低功耗的ECL栅极

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI:10.1109/BIPOL.1994.587872

V. Oklobdzija

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引用次数: 7

摘要

描述了一种ECL栅极，在过去的电路中显示出改进的速度-功率乘积。这种改进是由于由受控电流源驱动的推挽输出级的组合。该电路具有更好的驱动能力和提高的速度，但它使用的功率比普通ECL栅极低一个数量级。全双极电路的实现也是可能的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An ECL gate with improved speed and low power in BiCMOS process

An ECL gate exhibiting an improved speed-power product over the circuits presented in the past is described. The improvement is due to a combination of a push-pull output stage driven by a controlled current source. This circuit has better driving capabilities and improved speed, yet it uses an order of magnitude less power than regular ECL gate. Fully bipolar realization of this circuit is also possible.

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Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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