M. Yang, Fu-Cheng Wangt, C. Yang, B. R. Bennett, T. Q. Do
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In this paper, we report unique three-terminal characteristics obtained from a semimetallic quantum well FET, which consists of two adjacent quantum wells, GaSb and InAs. As a result of their band alignment, both the two-dimensional (2D) electron gas and the 2D hole gas can coexist. With a standard FET structure, the 2D carrier concentration can be continuously tuned from >10/sup 12/ electrons/cm/sup 2/ to >10/sup 12/ holes/cm/sup 2/, when the gate voltage is varied from +8V to -8V. An efficient frequency-doubler utilizing this coupled dual-channel FET is demonstrated.
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