用于2.5D组装的COOL衬底

Charles Lin, Nick Wang, J. Tan
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引用次数: 2

摘要

高数据传输的系统集成通常要求具有精细线路路由能力的封装解决方案,以便提供所需的性能,具有更好的功率和信号完整性。然而,虽然晶圆制造正在以无情的速度发展,但IC衬底技术仍无法以合理的成本满足器件的精细特性需求。这主要是由于树脂材料的机械稳定性差和当前制造基础设施的设备限制。因此,无机中间体,如硅和玻璃中间体,由于其优异的材料性能,如低CTE,高模量和通孔加工能力,已经得到了广泛的研究。然而,即使是精细的功能中间体也可以满足器件的互连需求,大多数2.5D架构采用芯片优先组装方法,由于高良率损失而导致制造成本高,因此限制了它们的应用范围。本文将介绍一种采用集成基板的创新芯片级2.5D组装,即有机层压板上载波(COOL)基板,以解决细间距互连和制造基础设施问题。在结构上,COOL基材有一个嵌入在构筑层压板中的中间层,并由加强筋支撑。根据器件布线密度要求和成本限制,中间层可以选择陶瓷、有机、玻璃或硅基芯片载体。由于中间层/层压板通过微孔镀工艺(低温工艺,无焊料回流)互连,热致应力和中间层翘曲问题可以在很大程度上得到解决。因此,与大多数传统的2.5D方法不同,在通过焊料在HDI基板上组装之前,芯片被连接在中间层上,COOL基板允许最困难的芯片连接过程作为最后的组装步骤。换句话说,COOL基板通过在已知的良好中间层/基板上仅实现一个高温焊料回流工艺(例如微凹凸热压缩),简化了整个2.5D组装。从电性能的角度来看,COOL基板最大限度地减少了传统HDI基板在铁芯层镀通孔所带来的寄生电阻和电感带来的巨大功率损耗。COOL基板中的加强筋可以为整个板提供机械支撑和翘曲管理。当中间层在中心区域保持平整度时,加强板控制来自外围的翘曲,这种低翘曲特征允许在倒装芯片组装中采用铜柱凸起。本文将说明如何将COOL基板用于传统的倒装芯片组装,而不会产生昂贵的新设备和新工具。其他优点,如更好的散热途径和支持封装组装解决方案也将被描述。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
COOL substrate for 2.5D assembly
System integration with high data transmission often demands packaging solution having fine line routing capability in order to deliver the desired performances with better power and signal integrity. However, while wafer fabrication is advancing at a relentless pace, IC substrate technology has not been able to catch up device's fine feature needs at reasonable cost. This is due mainly to resin materials' poor mechanical stability and equipment limitations of current manufacturing infrastructure. As such, inorganic interposer such as silicon and glass interposers have been investigated intensively with their excellent material properties such as low CTE, high modulus and through-via processing capability. However, even fine feature interposer can meet devices' interconnect needs, most of 2.5D architectures adopt chip-first assembly methodology, which suffers high manufacturing cost due to high yield loss and thus limits their applications only in a very narrow area. This paper will describe an innovative chip-last 2.5D assembly using an integrated substrate namely, Carrier-on-Organic-Laminate (COOL) substrate to address fine pitch interconnection and manufacturing infrastructure issues. Structurally, COOL substrate has an interposer embedded in a build-up laminate and supported by a stiffener. The interposer can be chosen from ceramic, organic, glass, or silicon-based chip carrier depending on device routing density requirements and cost constraint. As interposer/laminate is interconnected by micro-via plating process (a low temperature process and devoid of solder reflow), thermal induced stress and interposer warpage problems can be largely resolved. As such, unlike most conventional 2.5D approaches where chip(s) are attached on an interposer before being assembled on HDI substrate by solder, COOL substrate allows most difficult chip-attachment process as the very last assembly step. In other words, COOL substrate simplifies the entire 2.5D assembly by enabling only one high temperature solder reflow process (e.g., micro-bump thermal compression) on a known good interposer/substrate. From the electrical performance viewpoint, COOL substrate minimizes the large power losses caused by the parasitic resistances and inductance introduced by conventional HDI substrate's plated through holes in core layer. Stiffener in COOL substrate can provide mechanical support and warpage management for the entire board. While the interposer maintains flatness in the central region, the stiffener control the warpage from periphery and this low warp feature allows copper pillar bumps be adopted in flip chip assembly. The paper will illustrate how the COOL substrate can be adapted for conventional flip chip assembly without incurring expensive new equipment and new tooling. Other benefits such as better thermal dissipation pathway and supporting Package-on-Package assembly solution will be described as well.
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