{"title":"BiCMOS技术中具有改进特性的新型变容管","authors":"J. Maget, R. Kraus","doi":"10.1109/ICM.2001.997486","DOIUrl":null,"url":null,"abstract":"The first true BiCMOS varactor combining typical elements of CMOS and bipolar Technologies is presented. Several test structures and different versions have been manufactured in a 0.25 /spl mu/m BiCMOS technology and measured. The first type of the proposed novel varactor structure features a capacitance tuning range (ratio of maximum to minimum achievable values) C/sub max//C/sub min/ of 3.8:1 with a minimum quality factor Q of 32 and a maximum Q of 273. Choosing the second type of the herein presented novel device, allows quality factors from 6 to above 500, while increasing the capacitance tuning range to an outstanding value of 10.11:1.","PeriodicalId":360389,"journal":{"name":"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel varactors in BiCMOS technology with improved characteristics\",\"authors\":\"J. Maget, R. Kraus\",\"doi\":\"10.1109/ICM.2001.997486\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The first true BiCMOS varactor combining typical elements of CMOS and bipolar Technologies is presented. Several test structures and different versions have been manufactured in a 0.25 /spl mu/m BiCMOS technology and measured. The first type of the proposed novel varactor structure features a capacitance tuning range (ratio of maximum to minimum achievable values) C/sub max//C/sub min/ of 3.8:1 with a minimum quality factor Q of 32 and a maximum Q of 273. Choosing the second type of the herein presented novel device, allows quality factors from 6 to above 500, while increasing the capacitance tuning range to an outstanding value of 10.11:1.\",\"PeriodicalId\":360389,\"journal\":{\"name\":\"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICM.2001.997486\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICM 2001 Proceedings. The 13th International Conference on Microelectronics.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICM.2001.997486","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel varactors in BiCMOS technology with improved characteristics
The first true BiCMOS varactor combining typical elements of CMOS and bipolar Technologies is presented. Several test structures and different versions have been manufactured in a 0.25 /spl mu/m BiCMOS technology and measured. The first type of the proposed novel varactor structure features a capacitance tuning range (ratio of maximum to minimum achievable values) C/sub max//C/sub min/ of 3.8:1 with a minimum quality factor Q of 32 and a maximum Q of 273. Choosing the second type of the herein presented novel device, allows quality factors from 6 to above 500, while increasing the capacitance tuning range to an outstanding value of 10.11:1.
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