碳纳米管工艺缺陷导致电路性能下降的评估

K. Sheikh, Lan Wei
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引用次数: 0

摘要

随着Si的缩放回报迅速减少,全球范围内对新兴材料和器件的积极研究努力正在寻求后摩尔解决方案[1,2]。虽然初步结果显示采用碳纳米管(CNTs)等新材料改善电路性能的潜力巨大[3],但更值得关注的一个关键挑战是,几乎所有这些新材料的材料成熟度和工艺质量与最先进的硅技术相差甚远。如果没有过去几十年对硅技术的巨大努力和投资,这些材料可能永远无法达到硅技术的工艺质量水平。因此,对这些新材料的公平评价和预测必须考虑到材料和工艺的缺陷。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Evaluation of circuit performance degradation due to CNT process imperfection
As the Si scaling return rapidly diminishes, active research efforts on emerging materials and devices are made worldwide seeking post-Moore solutions [1,2]. While preliminary results show great potentials to improve circuit performance by adopting new materials including carbon nanotubes (CNTs)[3], one critical challenge that deserves more attention is that the material maturity and process quality of almost all these new materials are far from the state-of-the-art silicon technology. Without the tremendous efforts and investment to develop silicon technology in the past decades, these materials may never achieve the level of process quality in Si technology. Hence, a fair evaluation and projection of these new materials must take into consideration the material and process imperfection.
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