HB1340℄先进的0.13um BCDMOS技术，包括完全隔离的晶体管

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694453

Kwangsik Ko, Sanghyun Lee, Dea-Hoon Kim, Jina Eum, Sung-Kun Park, I. Cho, Jong-Hwan Kim, K. Yoo

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引用次数: 16

摘要

在这项工作中，我们开发了一种包含双漂移层的全隔离结构器件的互补LDMOS的HB1340-0.13um BCD技术。通过对漏极的优化设计，我们可以在导通电阻和击穿电压之间实现最佳的平衡。HB1340工艺在0.13um 1.5V/5V/6V CMOS技术平台上，可为移动和显示电源应用提供各种高电压器件，如LDMOS、12V至40V演示和全隔离24V LDNMOS。高增益BJT、齐纳二极管、高压二极管、高电阻、MIM和EEPROM也被集成到智能电源技术中。

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HB1340 ℄ Advanced 0.13um BCDMOS technology of complimentary LDMOS including fully isolated transistors

In this work, we developed a HB1340-0.13um BCD technology of the complimentary LDMOS including fully isolated structure device with dual drift layer. We could achieve LDMOS with best-in-class trade-off between specific on-resistance and breakdown voltage by its optimized drain engineering. The HB1340 process in 0.13um 1.5V/5V/6V CMOS technology platform can provide various kinds of high voltage devices such as LDMOS, DEMOS from 12V to 40V and fully isolated 24V LDNMOS for mobile and display power application. High gain BJT, Zener diode, high voltage diode, high resistor, MIM and EEPROM are also have been integrated in smart power technology.

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来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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