用于智能电源集成电路的单聚EEPROM

E. Carman, P. Parris, H. Chaffai, Fabrice Cotdeloup, Serge Debortoii, E. Hemon, J. Lin-Kwang, O. Perat, T. Sicard
{"title":"用于智能电源集成电路的单聚EEPROM","authors":"E. Carman, P. Parris, H. Chaffai, Fabrice Cotdeloup, Serge Debortoii, E. Hemon, J. Lin-Kwang, O. Perat, T. Sicard","doi":"10.1109/ISPSD.2000.856800","DOIUrl":null,"url":null,"abstract":"Smart power integrated circuits need low density memory for applications such as trimming, IC customization, system addresses, and part traceability with few program/erase cycles. Memory solutions must be low cost and demonstrate high reliability in automotive environments. Programmability in the application is an advantage. We have developed a single poly EEPROM that meets these requirements and in addition gives significant die area savings over traditional low cost memory techniques.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Single poly EEPROM for smart power IC's\",\"authors\":\"E. Carman, P. Parris, H. Chaffai, Fabrice Cotdeloup, Serge Debortoii, E. Hemon, J. Lin-Kwang, O. Perat, T. Sicard\",\"doi\":\"10.1109/ISPSD.2000.856800\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Smart power integrated circuits need low density memory for applications such as trimming, IC customization, system addresses, and part traceability with few program/erase cycles. Memory solutions must be low cost and demonstrate high reliability in automotive environments. Programmability in the application is an advantage. We have developed a single poly EEPROM that meets these requirements and in addition gives significant die area savings over traditional low cost memory techniques.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856800\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

智能电源集成电路需要低密度存储器,用于修剪,IC定制,系统地址和零件可追溯性等应用,只需很少的程序/擦除周期。存储器解决方案必须是低成本的,并且在汽车环境中具有高可靠性。应用程序的可编程性是一个优势。我们已经开发出一种满足这些要求的单聚EEPROM,并且与传统的低成本存储技术相比,它可以显著节省芯片面积。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Single poly EEPROM for smart power IC's
Smart power integrated circuits need low density memory for applications such as trimming, IC customization, system addresses, and part traceability with few program/erase cycles. Memory solutions must be low cost and demonstrate high reliability in automotive environments. Programmability in the application is an advantage. We have developed a single poly EEPROM that meets these requirements and in addition gives significant die area savings over traditional low cost memory techniques.
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