IDDQ漏电故障分析中内部电路VDD路由FIB编辑新技术

Akeel Nazakat, Li Yungui, Renee Liu, Vincent Chew
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引用次数: 3

摘要

静态曲线跟踪是一种无需对电子元件进行刺激就能发现信号参数损伤的重要测试方法,过程相对较快,类似于详细的连续性测试。然而,它的缺点是当我们测量的垫信号,特别是VDD电源线,只在特定或外部垫电路布线,在集成电路中留下各种内部未经测试的电路。这一结果在实际的缺陷地点不能在某些区域被检测到。将布局电路研究和聚焦离子束(FIB)编辑相结合的新方法用于为未经测试的内部电路创建额外的功率(VDD),从而结合故障定位技术对故障模式进行广泛的表征。通过低IDDQ泄漏失效分析,验证了该方法的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Novel Techniques of FIB Edit on VDD Routing in Internal Circuit for IDDQ Leakage Failure Analysis
Static curve trace is an essential test method to discover parametric damage on a signal without adding stimulus to an electronic component, it is relatively quick process, and resembling to a detailed continuity test. Yet, its drawback comes when pad signal that we measured, especially VDD power line, routed only at specific or outer pad circuitries, leaving various internal untested circuits within the integrated circuit. This consequence in actual defect site cannot be detected in certain areas. A novel approach to combine layout circuitry study and focus ion beam (FIB) edit are used to create additional power (VDD) to this untested internal circuits to have an extensive characterization of failure mode coupled with fault localization techniques. This paper demonstrates the effectiveness of this method with low IDDQ leakage failure analysis.
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