退火和温度对Ge缩合制备SGOI的影响

2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2006-07-03 DOI:10.1109/IPFA.2006.251018

S. Balakumar, C.S. Ongu, C. Tung, A. Trigg, M. Li, R. Kumar, G. Lo, N. Balasubramanian, Y. Yeo, D. Kwong

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引用次数: 2

摘要

在这项工作中，我们研究了氧化温度和退火对Ge运动的影响，以及在Ge冷凝过程中不适当降低温度所导致的非晶化。提出了可能的机制、解决方案和意义，并表明在1050℃的高温下氧化和退火可以获得含锗高达60%的SiGe

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Effects of Annealing and Temperature on SGOI Fabrication Using Ge Condensation

In this work, we investigate the effects of oxidation temperature and annealing on Ge movement, and amorphization as an undesirable consequence of inappropriate lowering of temperature during Ge condensation. Possible mechanisms, solutions and implications are presented and it is shown that SiGe with up to 60% Ge can be obtained with oxidation and annealing at a high temperature of 1050degC

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2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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