T. Roy, E. Zhang, D. Fleetwood, peixiong zhao, Y. Puzyrev, S. Pantelides
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Low-frequency noise measurements and density functional theory calculations are combined to show that N-anti-site and C impurity defects can lead to changes in the low frequency noise of GaN/AlGaN HEMTs fabricated with three typical process conditions. Implications for device reliability are discussed.
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