SOI MOSFET紧凑建模的物理分析

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI:10.1109/SOI.2010.5641065

S. Baba, J. Ida, K. Tani, T. Chiba, Y. Igarashi, K. Sakamoto, M. Miura-Mattausch

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引用次数: 0

摘要

本文从大范围几何尺寸、温度、器件物理、gm第二峰、自热效应等角度分析了SOI mosfet动态耗尽模式的器件工作。总结了DD模式的总体情况，为下一个新的紧凑电路模型提供了重要的知识。

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Analysis of SOI MOSFET physics for compact modeling

This report shows an analysis of device operation on dynamic depletion mode of SOI MOSFETs, from view points of wide range geometry size, temperature and also considering device physics, second peak of gm, self-heating effect and so on. It is summarized a general picture of DD mode, which is important knowledge for next new compact circuit model.

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2010 IEEE International SOI Conference (SOI)

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