用于片上DC/DC转换器的低压CMOS兼容功率MOSFET

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856769

S. Nassif-Khalil, S. Honarkhah, C. Salama

{"title":"用于片上DC/DC转换器的低压CMOS兼容功率MOSFET","authors":"S. Nassif-Khalil, S. Honarkhah, C. Salama","doi":"10.1109/ISPSD.2000.856769","DOIUrl":null,"url":null,"abstract":"1 A lateral Power MOSFET switch, implemented in a 0.25 /spl mu/m-5 metal CMOS process and suitable for high-frequency switch mode on-chip DC/DC converters is described in this paper. The fabricated device has an active chip area of 130 /spl mu/m/spl times/130 /spl mu/m and exhibits an on-resistance of 40.37 m/spl Omega/ (a specific on-resistance of 6.82 /spl mu//spl Omega/cm/sup 2/) and a total gate charge of 0.105 nC at V/sub GS/=3.3 V.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Low voltage CMOS compatible power MOSFET for on-chip DC/DC converters\",\"authors\":\"S. Nassif-Khalil, S. Honarkhah, C. Salama\",\"doi\":\"10.1109/ISPSD.2000.856769\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"1 A lateral Power MOSFET switch, implemented in a 0.25 /spl mu/m-5 metal CMOS process and suitable for high-frequency switch mode on-chip DC/DC converters is described in this paper. The fabricated device has an active chip area of 130 /spl mu/m/spl times/130 /spl mu/m and exhibits an on-resistance of 40.37 m/spl Omega/ (a specific on-resistance of 6.82 /spl mu//spl Omega/cm/sup 2/) and a total gate charge of 0.105 nC at V/sub GS/=3.3 V.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856769\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856769","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

本文介绍了一种采用0.25 /spl mu/m-5金属CMOS工艺实现的适用于高频开关模式片上DC/DC变换器的横向功率MOSFET开关。所制器件的有源芯片面积为130 /spl mu/m/spl × 130 /spl mu/m，导通电阻为40.37 m/spl Omega/(比导通电阻为6.82 /spl mu//spl Omega/cm/sup 2/)，在V/sub GS/=3.3 V时，总栅极电荷为0.105 nC。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Low voltage CMOS compatible power MOSFET for on-chip DC/DC converters

1 A lateral Power MOSFET switch, implemented in a 0.25 /spl mu/m-5 metal CMOS process and suitable for high-frequency switch mode on-chip DC/DC converters is described in this paper. The fabricated device has an active chip area of 130 /spl mu/m/spl times/130 /spl mu/m and exhibits an on-resistance of 40.37 m/spl Omega/ (a specific on-resistance of 6.82 /spl mu//spl Omega/cm/sup 2/) and a total gate charge of 0.105 nC at V/sub GS/=3.3 V.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

自引率

0.00%

发文量