{"title":"一种GaAs MMIC放大器的可靠性研究","authors":"K. Christianson, J. Roussos, W. Anderson","doi":"10.1109/RELPHY.1992.187665","DOIUrl":null,"url":null,"abstract":"Accelerated aging was used to investigated the reliability of a 2-18 GHz monolithic microwave integrated circuit amplifier. A mean time between failures of 2.5*10/sup 5/ h at a channel temperature of 125 degrees C was estimated from high-temperature accelerated RF lifetest results. Failure analysis revealed that degradation and burnout were caused by leakage currents at the GaAs surface/passivation-layer interface.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Reliability study of a GaAs MMIC amplifier\",\"authors\":\"K. Christianson, J. Roussos, W. Anderson\",\"doi\":\"10.1109/RELPHY.1992.187665\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Accelerated aging was used to investigated the reliability of a 2-18 GHz monolithic microwave integrated circuit amplifier. A mean time between failures of 2.5*10/sup 5/ h at a channel temperature of 125 degrees C was estimated from high-temperature accelerated RF lifetest results. Failure analysis revealed that degradation and burnout were caused by leakage currents at the GaAs surface/passivation-layer interface.<<ETX>>\",\"PeriodicalId\":154383,\"journal\":{\"name\":\"30th Annual Proceedings Reliability Physics 1992\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th Annual Proceedings Reliability Physics 1992\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1992.187665\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th Annual Proceedings Reliability Physics 1992","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1992.187665","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Accelerated aging was used to investigated the reliability of a 2-18 GHz monolithic microwave integrated circuit amplifier. A mean time between failures of 2.5*10/sup 5/ h at a channel temperature of 125 degrees C was estimated from high-temperature accelerated RF lifetest results. Failure analysis revealed that degradation and burnout were caused by leakage currents at the GaAs surface/passivation-layer interface.<>
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