一种用于1700 V IGBT模块的新型自由旋转二极管

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856829

N. Iwamuro, F. Nagaune, T. Iwaana, Y. Seki

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引用次数: 1

摘要

提出了一种新颖的自由旋转二极管，其阻塞能力为1700 V，在正向压降和反向恢复损耗之间实现了良好的权衡特性。成功实现了1.85 V的正向压降(Vf)和13.0 mJ的反向恢复损耗(Err)(额定电流设置为100安培)。这些Vf和Err值表明了比传统FWD更好的权衡特性。此外，值得注意的是，新开发的FWD实现了正的温度系数Vf，这更有利于IGBT模块的并联。

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A novel free wheeling diode for 1700 V IGBT module

A novel free wheeling diode with its blocking capability of 1700 V is presented to realize an excellent trade-off characteristic between a forward voltage drop and a reverse recovery loss, for the first time. A superior forward voltage drop (Vf) of 1.85 V with the reverse recovery loss (Err) of 13.0 mJ is successfully achieved (a rated current is set at 100 amperes). These values of Vf and Err indicate the much superior trade-off characteristic to the conventional FWD. Furthermore, it should be noted that the newly developed FWD achieves a positive temperature coefficient of Vf, which is more advantageous for parallel connection of an IGBT module.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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