前端加工对栅极氧化物可靠性的影响

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-11 DOI:10.1109/IPFA.2007.4378078

K. Ahmed

{"title":"前端加工对栅极氧化物可靠性的影响","authors":"K. Ahmed","doi":"10.1109/IPFA.2007.4378078","DOIUrl":null,"url":null,"abstract":"In the past decade, SiON films with N content less than 15% at. have enabled scaling of CMOS devices down to 65nm node. The introduction of new materials (e.g. high-k, metal electrodes) and integration flows resulted in new device and circuit reliability issues. Innovation in process, integration and manufacturing equipment, in addition to acceleration of understanding of reliability physics for these new materials, are necessary in order to meet product reliability and performance specifications.","PeriodicalId":334987,"journal":{"name":"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"161 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Impact of Front End Processing on Gate Oxide Reliability\",\"authors\":\"K. Ahmed\",\"doi\":\"10.1109/IPFA.2007.4378078\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the past decade, SiON films with N content less than 15% at. have enabled scaling of CMOS devices down to 65nm node. The introduction of new materials (e.g. high-k, metal electrodes) and integration flows resulted in new device and circuit reliability issues. Innovation in process, integration and manufacturing equipment, in addition to acceleration of understanding of reliability physics for these new materials, are necessary in order to meet product reliability and performance specifications.\",\"PeriodicalId\":334987,\"journal\":{\"name\":\"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"161 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2007.4378078\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2007.4378078","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

近十年来，氮含量小于15%的SiON薄膜在。使CMOS器件的尺寸降至65nm节点。新材料(如高钾金属电极)和集成流程的引入导致了新的器件和电路可靠性问题。为了满足产品的可靠性和性能规范，除了加速对这些新材料的可靠性物理的理解之外，还需要在工艺、集成和制造设备方面进行创新。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Impact of Front End Processing on Gate Oxide Reliability

In the past decade, SiON films with N content less than 15% at. have enabled scaling of CMOS devices down to 65nm node. The introduction of new materials (e.g. high-k, metal electrodes) and integration flows resulted in new device and circuit reliability issues. Innovation in process, integration and manufacturing equipment, in addition to acceleration of understanding of reliability physics for these new materials, are necessary in order to meet product reliability and performance specifications.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

自引率

0.00%

发文量