利用EUV光刻技术集成k=2.3自旋聚合物的亚28nm技术节点

2012 IEEE International Interconnect Technology Conference Pub Date : 2012-06-04 DOI:10.1109/IITC.2012.6251566

C. Wilson, F. Lazzarino, V. Truffert, T. Kirimura, J. de Marneffe, P. Verdonck, M. Hirai, K. Nakatani, M. Tada, N. Heylen, Z. El-Mekki, K. Vanstreels, E. Van Besien, I. Ciofi, M. Stucchi, K. Croes, L. Zhang, S. Demuynck, M. Ercken, K. Xu, M. Baklanov, Z. Tokei

{"title":"利用EUV光刻技术集成k=2.3自旋聚合物的亚28nm技术节点","authors":"C. Wilson, F. Lazzarino, V. Truffert, T. Kirimura, J. de Marneffe, P. Verdonck, M. Hirai, K. Nakatani, M. Tada, N. Heylen, Z. El-Mekki, K. Vanstreels, E. Van Besien, I. Ciofi, M. Stucchi, K. Croes, L. Zhang, S. Demuynck, M. Ercken, K. Xu, M. Baklanov, Z. Tokei","doi":"10.1109/IITC.2012.6251566","DOIUrl":null,"url":null,"abstract":"In this work we integrate an advanced k=2.3 spin-on polymer at 40nm ½ pitch. K-value restoration techniques are investigated and complete k-value restoration is demonstrated using an in-situ HeH2 plasma. An EUV compatible stack and a dielectric dual hard mask scheme is developed to pattern trenches with good uniformity and low litho-etch bias. The impact of scaling the dielectric spacing and of direct CMP on time dependent dielectric breakdown is also studied.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Integration of a k=2.3 spin-on polymer for the sub-28nm technology node using EUV lithography\",\"authors\":\"C. Wilson, F. Lazzarino, V. Truffert, T. Kirimura, J. de Marneffe, P. Verdonck, M. Hirai, K. Nakatani, M. Tada, N. Heylen, Z. El-Mekki, K. Vanstreels, E. Van Besien, I. Ciofi, M. Stucchi, K. Croes, L. Zhang, S. Demuynck, M. Ercken, K. Xu, M. Baklanov, Z. Tokei\",\"doi\":\"10.1109/IITC.2012.6251566\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we integrate an advanced k=2.3 spin-on polymer at 40nm ½ pitch. K-value restoration techniques are investigated and complete k-value restoration is demonstrated using an in-situ HeH2 plasma. An EUV compatible stack and a dielectric dual hard mask scheme is developed to pattern trenches with good uniformity and low litho-etch bias. The impact of scaling the dielectric spacing and of direct CMP on time dependent dielectric breakdown is also studied.\",\"PeriodicalId\":165741,\"journal\":{\"name\":\"2012 IEEE International Interconnect Technology Conference\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2012.6251566\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在这项工作中，我们集成了一个先进的k=2.3自旋聚合物在40nm½节距。研究了k值恢复技术，并演示了使用原位HeH2等离子体完全恢复k值。提出了一种EUV兼容堆栈和介电双硬掩膜方案，以获得均匀性好、低蚀刻偏压的沟槽图案。研究了介电间距缩放和直接CMP对介电击穿随时间变化的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Integration of a k=2.3 spin-on polymer for the sub-28nm technology node using EUV lithography

In this work we integrate an advanced k=2.3 spin-on polymer at 40nm ½ pitch. K-value restoration techniques are investigated and complete k-value restoration is demonstrated using an in-situ HeH2 plasma. An EUV compatible stack and a dielectric dual hard mask scheme is developed to pattern trenches with good uniformity and low litho-etch bias. The impact of scaling the dielectric spacing and of direct CMP on time dependent dielectric breakdown is also studied.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2012 IEEE International Interconnect Technology Conference

自引率

0.00%

发文量