采用“自适应回流”技术改善LDMOS晶体管的SOA

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856840

P. Hower, J. Lin, S. Merchant, S. Paiva

{"title":"采用“自适应回流”技术改善LDMOS晶体管的SOA","authors":"P. Hower, J. Lin, S. Merchant, S. Paiva","doi":"10.1109/ISPSD.2000.856840","DOIUrl":null,"url":null,"abstract":"Measured SOA is compared with simulations for field gap LDMOS transistors. The utility of an n-type \"resurf\" or \"nfield\" implant under the field oxide is considered. For a fixed VDS, it is shown that there is an optimum value of nfield dose.","PeriodicalId":260241,"journal":{"name":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"Using \\\"Adaptive resurf\\\" to improve the SOA of LDMOS transistors\",\"authors\":\"P. Hower, J. Lin, S. Merchant, S. Paiva\",\"doi\":\"10.1109/ISPSD.2000.856840\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Measured SOA is compared with simulations for field gap LDMOS transistors. The utility of an n-type \\\"resurf\\\" or \\\"nfield\\\" implant under the field oxide is considered. For a fixed VDS, it is shown that there is an optimum value of nfield dose.\",\"PeriodicalId\":260241,\"journal\":{\"name\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2000.856840\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2000.856840","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 21

摘要

将实测的SOA与场隙LDMOS晶体管的仿真结果进行了比较。在场氧化物下考虑了n型“回流”或“内场”植入物的实用性。对于一个固定的VDS，存在一个最佳的场内剂量值。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Using "Adaptive resurf" to improve the SOA of LDMOS transistors

Measured SOA is compared with simulations for field gap LDMOS transistors. The utility of an n-type "resurf" or "nfield" implant under the field oxide is considered. For a fixed VDS, it is shown that there is an optimum value of nfield dose.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

自引率

0.00%

发文量