A study on statistical parameter modeling of power MOSFET model by principal component analysis

In this paper, a set of dominant model parameters, which largely contributes characteristic variation of power MOSFETs, has been studied on the basis of statistical parameter extraction. Through the numerical analysis upon measured drain currents of a SiC power MOSFET, we demonstrate that the fluctuation of the current characteristics can be represented by a few random variables. In our example, threshold voltage and current scaling factor are identified particularly important to approximate the fluctuation of the current characteristics.