基于SIMOX材料的1-M位SRAM

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344546

E. Yee, L. Hite, T. Houston, Y. Sheu, Rajan, Rajgopal, C. Shen, J. Hwang, G. Pollack

{"title":"基于SIMOX材料的1-M位SRAM","authors":"E. Yee, L. Hite, T. Houston, Y. Sheu, Rajan, Rajgopal, C. Shen, J. Hwang, G. Pollack","doi":"10.1109/SOI.1993.344546","DOIUrl":null,"url":null,"abstract":"A 1-M bit SRAM with 0.8 um feature sizes has been successfully fabricated using SIMOX material. The advantages of SOI for low capacitance, latch-up immunity, and reduced collection charge for single events have been long recognized. The demonstration of a 1-M SRAM at 0.8 um is a significant milestone in the evaluation of the technology for fabrication of very large scale integrated circuits.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 1-M bit SRAM on SIMOX material\",\"authors\":\"E. Yee, L. Hite, T. Houston, Y. Sheu, Rajan, Rajgopal, C. Shen, J. Hwang, G. Pollack\",\"doi\":\"10.1109/SOI.1993.344546\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1-M bit SRAM with 0.8 um feature sizes has been successfully fabricated using SIMOX material. The advantages of SOI for low capacitance, latch-up immunity, and reduced collection charge for single events have been long recognized. The demonstration of a 1-M SRAM at 0.8 um is a significant milestone in the evaluation of the technology for fabrication of very large scale integrated circuits.<<ETX>>\",\"PeriodicalId\":308249,\"journal\":{\"name\":\"Proceedings of 1993 IEEE International SOI Conference\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1993 IEEE International SOI Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1993.344546\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344546","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

利用SIMOX材料成功制备了具有0.8 um特征尺寸的1 m位SRAM。SOI在低电容、锁存抗扰度和降低单事件收集电荷方面的优势早已得到认可。在0.8微米下的1m SRAM的演示是评估超大规模集成电路制造技术的一个重要里程碑

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A 1-M bit SRAM on SIMOX material

A 1-M bit SRAM with 0.8 um feature sizes has been successfully fabricated using SIMOX material. The advantages of SOI for low capacitance, latch-up immunity, and reduced collection charge for single events have been long recognized. The demonstration of a 1-M SRAM at 0.8 um is a significant milestone in the evaluation of the technology for fabrication of very large scale integrated circuits.<>

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of 1993 IEEE International SOI Conference

自引率

0.00%

发文量