用于先进互连金属化的第二代镀铜化学添加剂的作用研究

R. Mikkola, Lin-lin Chen
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引用次数: 2

摘要

本文讨论了新出现的第二代铜电化学沉积(ECD)镀液添加剂对先进互连沟槽填充机理的影响。评价了促进剂(有机二硫化物)和抑制剂(聚合物)在双组分添加剂包中的作用。此外,还探讨了氯离子浓度对聚合物- cl相互作用对填充机理的影响。部分充填的电镀铜沟的SEM截面表现为(1)保形充填和(2)自下而上充填的两阶段充填机制。结果表明,聚合物- cl络合物在亚微米沟槽充填初期起关键作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Investigation of the roles of the additive components for second generation copper electroplating chemistries used for advanced interconnect metalization
This paper discusses the effects of the emerging second generation copper electrochemical deposition (ECD) bath additives on the fill mechanism for advanced interconnect trenches. The role of the accelerator (organic disulfides) and suppressor (polymers) for a two component additive package was evaluated. In addition the effects of the polymer-Cl interaction on the fill mechanism as a function of chloride ion concentration was explored. SEM cross sections of partially filled electroplated copper trenches show a two stage fill mechanism consisting of (1) conformal fill followed by (2) bottom-up fill. It was determined that the polymer-Cl complex plays a critical role during the initial stages of fill for sub one-micron trenches.
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