先进FD-SOI CMOS技术中用于薄硅ESD保护的门控二极管- bimos

2017 IEEE International Conference on IC Design and Technology (ICICDT) Pub Date : 2017-05-23 DOI:10.1109/ICICDT.2017.7993509

L. D. Conti, T. Bedecarrats, M. Vinet, S. Cristoloveanu, P. Galy

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引用次数: 2

摘要

本文提出了一种采用28nm UTBB FD-SOI高k金属栅CMOS技术制备的门控二极管合并CMOS (GDBIMOS)器件。它具有高度可重构性和拓扑鲁棒性，可用于ESD保护。由于掺杂调整和不同可能的栅极连接，实现了合适的ESD窗口。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Toward Gated-Diode-BIMOS for thin silicon ESD protection in advanced FD-SOI CMOS technologies

This paper presents a new device named the Gated Diode merged BIMOS (GDBIMOS) which is fabricated using the 28nm UTBB FD-SOI high-k metal gate CMOS technology. It is highly reconfigurable and topologically robust for ESD protection. The suitable ESD window is achieved thanks to doping adjustment and to different possible gate connections.

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2017 IEEE International Conference on IC Design and Technology (ICICDT)

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