用于3D双极电阻式存储阵列的压敏型双向开关(JMAX>107A/cm2，选择性~ 104)

2012 Symposium on VLSI Technology (VLSIT) Pub Date : 2012-06-12 DOI:10.1109/VLSIT.2012.6242449

Wootae Lee, Jubong Park, Jungho Shin, J. Woo, Seonghyun Kim, G. Choi, Seungjae Jung, Sangsu Park, Daeseok Lee, E. Cha, H. Lee, S. Kim, Suock Chung, H. Hwang

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引用次数: 65

摘要

我们展示了一种具有优异选择性能的压敏型双向开关(VBS)，用于未来的3D双极电阻式存储阵列。高度非线性的VBS具有高电流密度(>;3×107A/cm2)和高选择性(~104)的优异性能。非线性I-V特性可以用压敏电阻型多层隧道势垒来解释，这些势垒是由Ta掺入到薄TiO2中形成的。此外，1S1R器件在1/2VREAD下表现出优异的泄漏电流抑制(>;减小104)，这在超高密度电阻式存储器应用中具有前景。

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Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays

We demonstrate a varistor-type bidirectional switch (VBS) with excellent selection property for future 3D bipolar resistive memory array. A highly non-linear VBS showed superior performances including high current density (>;3×10⁷A/cm²) and high selectivity (~10⁴). The non-linear I-V characteristics can be explained by varistor-type multi-layer tunnel barriers, which were formed by Ta incorporation into thin TiO₂. Furthermore, the 1S1R device showed excellent suppression of leakage current (>;10⁴ reduction) at 1/2V_READ, which is promising for ultra-high density resistive memory applications.

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2012 Symposium on VLSI Technology (VLSIT)

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