{"title":"晶片级VFTLP系统的改进及器件导通效应的研究","authors":"Junjun Li, S. Hyvonen, E. Rosenbaum","doi":"10.1109/EOSESD.2004.5272590","DOIUrl":null,"url":null,"abstract":"We present an improved wafer-level VFTLP measurement system. This system produces pulses with sub-150 ps rise time and few distortions at the rising edge. By introducing a broadband power divider, the oscilloscope no longer limits the pulse amplitude, and arbitrarily high pulse voltages can be measured. Turn-on effects in diodes and NMOSFETs are investigated using this system.","PeriodicalId":302866,"journal":{"name":"2004 Electrical Overstress/Electrostatic Discharge Symposium","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Improved wafer-level VFTLP system and investigation of device turn-on effects\",\"authors\":\"Junjun Li, S. Hyvonen, E. Rosenbaum\",\"doi\":\"10.1109/EOSESD.2004.5272590\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present an improved wafer-level VFTLP measurement system. This system produces pulses with sub-150 ps rise time and few distortions at the rising edge. By introducing a broadband power divider, the oscilloscope no longer limits the pulse amplitude, and arbitrarily high pulse voltages can be measured. Turn-on effects in diodes and NMOSFETs are investigated using this system.\",\"PeriodicalId\":302866,\"journal\":{\"name\":\"2004 Electrical Overstress/Electrostatic Discharge Symposium\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Electrical Overstress/Electrostatic Discharge Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EOSESD.2004.5272590\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Electrical Overstress/Electrostatic Discharge Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EOSESD.2004.5272590","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improved wafer-level VFTLP system and investigation of device turn-on effects
We present an improved wafer-level VFTLP measurement system. This system produces pulses with sub-150 ps rise time and few distortions at the rising edge. By introducing a broadband power divider, the oscilloscope no longer limits the pulse amplitude, and arbitrarily high pulse voltages can be measured. Turn-on effects in diodes and NMOSFETs are investigated using this system.
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