采用常导通MEMS开关的ESD保护装置

TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference Pub Date : 2009-06-21 DOI:10.1109/SENSOR.2009.5285717

T. Ikehashi, Tomohiro Saito

{"title":"采用常导通MEMS开关的ESD保护装置","authors":"T. Ikehashi, Tomohiro Saito","doi":"10.1109/SENSOR.2009.5285717","DOIUrl":null,"url":null,"abstract":"We investigate normally-off and normally-on MEMS switches as ESD protection devices. The normally-on type switch behaves as an ESD protection only when the system power is off. We show that the optimized normally-on switch realizes ≫4000V HBM-ESD robustness with parasitic capacitance as small as 1.8fF.","PeriodicalId":247826,"journal":{"name":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"An ESD preotection device using normally-on MEMS switch\",\"authors\":\"T. Ikehashi, Tomohiro Saito\",\"doi\":\"10.1109/SENSOR.2009.5285717\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate normally-off and normally-on MEMS switches as ESD protection devices. The normally-on type switch behaves as an ESD protection only when the system power is off. We show that the optimized normally-on switch realizes ≫4000V HBM-ESD robustness with parasitic capacitance as small as 1.8fF.\",\"PeriodicalId\":247826,\"journal\":{\"name\":\"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-06-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.2009.5285717\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.2009.5285717","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

我们研究了常关和常开MEMS开关作为ESD保护器件。正常导通开关仅在系统掉电时起ESD保护作用。结果表明，优化后的正常导通开关实现了4000V的HBM-ESD稳健性，寄生电容小至1.8fF。

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An ESD preotection device using normally-on MEMS switch

We investigate normally-off and normally-on MEMS switches as ESD protection devices. The normally-on type switch behaves as an ESD protection only when the system power is off. We show that the optimized normally-on switch realizes ≫4000V HBM-ESD robustness with parasitic capacitance as small as 1.8fF.

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TRANSDUCERS 2009 - 2009 International Solid-State Sensors, Actuators and Microsystems Conference

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