系统级高效ESD设计在高速USB3中的应用x接口

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI:10.23919/EOS/ESD.2018.8509765

Pengyu Wei, Giorgi Maghlakelidze, Jianchi Zhou, H. Gossner, D. Pommerenke

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引用次数: 10

摘要

一个高速USB3。x IO的分析使用系统级高效ESD设计方法[1]，对TX和RX引脚进行板载电流和电压测量。通过测量和仿真研究了外部ESD保护器件与片内ESD保护电路之间的相互作用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An Application of System Level Efficient ESD Design for HighSpeed USB3.x Interface

A high-speed USB3.x IO is analyzed using the System level efficient ESD design methodology [1] using on-board current and voltage measurements for the TX and RX pins. The interactions between external ESD protection device and the on-chip ESD protection circuit is investigated in measurement and simulation.

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来源期刊

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

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