PECVD SiC和SiCN帽层沉积对介孔二氧化硅超低k介电膜的影响

Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI Pub Date : 2003-04-22 DOI:10.1109/ASMC.2003.1194481

S. Schulz, K. Schulze, J. Matusche, U. Schmidt, T. Gessner

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引用次数: 0

摘要

采用最小介电常数的帽层是保证整个介电层有效k值最小的关键。因此，沉积k < 5.0的PECVD SiC和SiCN帽层对低k介电膜电学和化学性能的影响是本研究的主题。

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Effect of PECVD SiC and SiCN cap layer deposition on mesoporous silica ultra low k dielectric films

It is crucial to apply cap layers with minimum permittivity to ensure a minimum effective k-value of the whole dielectric stack. Therefore, the influence of the deposition of PECVD SiC and SiCN cap layers with k < 5.0 on the electrical and chemical properties of low k dielectric films is the subject of this work.

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Advanced Semiconductor Manufacturing Conference and Workshop, 2003 IEEEI/SEMI

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