电子自旋共振(ESR)表征低k介电体的温度效应缺陷

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854316

P. Turek, M. Bernard, N. Lardon, J. Maisonobe, G. Passemard

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引用次数: 0

摘要

电子自旋共振(ESR)技术已被用于检测和研究各种低k介电体中的顺磁缺陷。尽管所研究的有机聚合物(SiLK(R)， FLARE(R))表现出先前报道的ESR响应，但在硅基有机矿物材料(MSQ, Black Diamond(R)， Xerogel)中没有检测到缺陷。观察到的缺陷有一种特殊的行为:(i)在空气暴露/真空循环时缺陷浓度的可逆变化，(ii)退火循环期间的固化效应。

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Electron spin resonance (ESR) characterization of defects in low-k dielectrics-temperature effect

The electron spin resonance (ESR) technique has been used for the detection and the study of paramagnetic defects in various low-k dielectrics. Whereas the studied organic polymers (SiLK(R), FLARE(R)) exhibit an ESR response as previously reported, no defects could be detected in the silicon based organo-mineral materials (MSQ, Black Diamond(R), Xerogel). A peculiar behavior is evidenced for the observed defects: (i) reversible variation of the defect concentration at air exposure/vacuum cycling, (ii) curing effect during annealing cycles.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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