{"title":"一种利用单晶铝互连研究晶界电迁移的新型测试结构","authors":"K. Kusuyama, Y. Nakajima, Y. Murakami","doi":"10.1109/ICMTS.1995.513977","DOIUrl":null,"url":null,"abstract":"The new test structure with single-crystal aluminum interconnection made by the lateral-epitaxial growth method, was designed to study electromigration (EM) at grain boundaries in bamboo structure. Having only two bamboo grain boundaries, the EM mechanism can be analyzed more accurately by this new structure than using the ordinary structure of series of grain boundaries.","PeriodicalId":432935,"journal":{"name":"Proceedings International Conference on Microelectronic Test Structures","volume":"550 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new test structure to study electromigration at grain boundaries using the single-crystal aluminum interconnection\",\"authors\":\"K. Kusuyama, Y. Nakajima, Y. Murakami\",\"doi\":\"10.1109/ICMTS.1995.513977\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The new test structure with single-crystal aluminum interconnection made by the lateral-epitaxial growth method, was designed to study electromigration (EM) at grain boundaries in bamboo structure. Having only two bamboo grain boundaries, the EM mechanism can be analyzed more accurately by this new structure than using the ordinary structure of series of grain boundaries.\",\"PeriodicalId\":432935,\"journal\":{\"name\":\"Proceedings International Conference on Microelectronic Test Structures\",\"volume\":\"550 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1995.513977\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1995.513977","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new test structure to study electromigration at grain boundaries using the single-crystal aluminum interconnection
The new test structure with single-crystal aluminum interconnection made by the lateral-epitaxial growth method, was designed to study electromigration (EM) at grain boundaries in bamboo structure. Having only two bamboo grain boundaries, the EM mechanism can be analyzed more accurately by this new structure than using the ordinary structure of series of grain boundaries.
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