NAND (FN/FN)操作下HfAlO高k电介质内嵌钨点数控器件的广泛可靠性分析

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-11 DOI:10.1109/IPFA.2007.4378084

P.K. Singh, A. Nainani

{"title":"NAND (FN/FN)操作下HfAlO高k电介质内嵌钨点数控器件的广泛可靠性分析","authors":"P.K. Singh, A. Nainani","doi":"10.1109/IPFA.2007.4378084","DOIUrl":null,"url":null,"abstract":"In this work we present an extensive reliability and performance evaluation of tungsten dot nanocrystal (NC) devices under NAND mode of operation. Improvement in performance and reliability was observed with scaling W and L. The use of better high-k processing is proposed to improve the reliability. We also propose a numerical simulation model for NC memory devices using transient capacitive charging model. The approach is very generic and computationally less extensive than the previous works.","PeriodicalId":334987,"journal":{"name":"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"56 4","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Extensive Reliability Analysis of Tungsten Dot NC Devices Embedded in HfAlO High-k Dielectric under NAND (FN/FN) Operation\",\"authors\":\"P.K. Singh, A. Nainani\",\"doi\":\"10.1109/IPFA.2007.4378084\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we present an extensive reliability and performance evaluation of tungsten dot nanocrystal (NC) devices under NAND mode of operation. Improvement in performance and reliability was observed with scaling W and L. The use of better high-k processing is proposed to improve the reliability. We also propose a numerical simulation model for NC memory devices using transient capacitive charging model. The approach is very generic and computationally less extensive than the previous works.\",\"PeriodicalId\":334987,\"journal\":{\"name\":\"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"56 4\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2007.4378084\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2007.4378084","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

在这项工作中，我们提出了广泛的可靠性和性能评估钨点纳米晶体(NC)器件在NAND模式下的工作。通过缩放W和l，可以观察到性能和可靠性的提高。建议使用更好的高k处理来提高可靠性。我们还提出了一种采用暂态电容充电模型的NC存储器件的数值模拟模型。该方法是非常通用的，并且在计算上比以前的工作要少。

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Extensive Reliability Analysis of Tungsten Dot NC Devices Embedded in HfAlO High-k Dielectric under NAND (FN/FN) Operation

In this work we present an extensive reliability and performance evaluation of tungsten dot nanocrystal (NC) devices under NAND mode of operation. Improvement in performance and reliability was observed with scaling W and L. The use of better high-k processing is proposed to improve the reliability. We also propose a numerical simulation model for NC memory devices using transient capacitive charging model. The approach is very generic and computationally less extensive than the previous works.

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2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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