用于高性能红外探测器的低成本多量子SiGe/Si/肖特基结构

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI:10.1109/ESSDERC.2011.6044168

M. Kolahdouz, M. Ostling, H. Radamson

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引用次数: 2

摘要

SiGe(C)/Si(C)多量子阱(mqw)单独或串联与肖特基二极管(SQW)已被表征为高性能热辐射计应用的热敏电阻材料。热敏电阻材料的热响应以电阻温度系数(TCR)表示，sqw的热敏电阻材料获得了6%/K的优异值。测量噪声功率谱密度，估计K1/f低至4.7×10−14。其突出的特点是在多层结构中缺陷密度低，界面质量高。这些结果对低成本红外探测器在不久的将来的市场增长是非常有希望的。

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A low cost multi quantum SiGe/Si/Schottky structure for high performance IR detectors

SiGe(C)/Si(C) multi quantum wells (MQWs) individually or in series with a Schottky diode (SQW) have been characterized as the thermistor materials for high performance bolometer application. The thermal response of the thermistor materials is expressed in temperature coefficient of resistance (TCR) and an excellent value of 6%/K is obtained for the SQWs. The noise power spectrum density was also measured and the K1/f was estimated as low as 4.7×10−14. The outstanding characteristics for the SQWs are due to low defect density and high interfacial quality in the multilayer structures. These results are very promising for the rising market of low cost IR detectors in the near future.

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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