Hot spot cooling in 3DIC package utilizing embedded thermoelectric cooler combined with silicon interposer

Sheng-Liang Li, Chung-Yen Hsu, Chun-Kai Liu, M. Dai, H. Chien, R. Tain
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引用次数: 6

Abstract

A novel design for hot spot cooling in 3DIC package by integrating the embedded thermoelectric cooler (ETC) is presented in this paper. The silicon (Si) interposer with through silicon vias (TSVs) was used as electrical paths for ETC and stacked on a Si chip that possesses a hot spot area on it. Finite element analysis (FEA) software ANSYS was utilized in present study to analyze the thermal performance. Three different structures: (1)TEC only, (2)TEC with copper ring and (3)copper spreader only were analyzed in present paper. The first two types are the novel designs and the third one is the traditional structure for thermal management in packaging. The dimensions of the Si chip and Si interposer are 5mm in length and width, and 100um in thickness, respectively. Three different sizes of hot spot area were adopted to investigate the cooling performance of each structure of package. Moreover, Si interposer used as an active device was also discussed. An improved novel design (second type: TEC with copper ring) was demonstrated from simulated results that provide the superior cooling performance to the other two structures.
利用嵌入式热电冷却器结合硅中间层的3DIC封装的热点冷却
本文提出了一种集成嵌入式热电冷却器(ETC)的3DIC封装热点冷却新设计。采用带通硅孔(tsv)的硅(Si)中间层作为ETC的电通路,并将其堆叠在具有热点区域的硅芯片上。本研究采用有限元分析软件ANSYS对其热性能进行分析。本文分析了三种不同的结构:(1)纯TEC,(2)带铜环的TEC和(3)纯铜散布器的TEC。前两种类型是新颖的设计,第三种是包装热管理的传统结构。硅片和硅中间层的尺寸分别为长宽5mm和厚度100um。采用三种不同尺寸的热点区域,对不同结构的封装冷却性能进行了研究。此外,还讨论了硅中间体作为有源器件的应用。模拟结果表明,一种改进的新型设计(第二种类型:铜环TEC)提供了优于其他两种结构的冷却性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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