Optoelectronic performance characterization of MoS2 photodetectors for low frequency sensing applications

IF 1.4 4区 工程技术
S. Ki, Mingze Chen, Xiaogan Liang
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引用次数: 1

Abstract

The specific advantages of implementing MoS2 and other layered semiconductors for optoelectronic biosensing and other relevant photodetection applications remain unclear. In this work, we investigate the photoresponsivity and noise characteristics of in-plane MoS2 photodetectors. This work indicates that MoS2 photodetectors exhibit lower noise equivalent power (NEP) and detectivity (D*) in comparison with commercial CdS photodetectors. In addition, the low-frequency NEP and D* values of MoS2 photodetectors exhibit a prominent dependence on the MoS2 photoactive layer thickness. We have identified the optimal MoS2 thickness in the range of 8–30 nm. We also study the photoresponse characteristics of optimized MoS2 photodetectors at several different wavelengths that are important for clinical colorimetry assays. Such an optimized photodetector shows a maximum photoresponsivity of 164.3 A/W and a minimum NEP of 3.99 × 10−17 W/Hz1/2 (and a D* of 5.01 × 1010 J) with relative variance less than 14%. This work provides a useful guideline for optimizing the photoresponse characteristics of MoS2-based optoelectronic devices, which is critical to practical low-frequency optoelectronic biosensing applications.
用于低频传感的二硫化钼光电探测器的光电性能表征
在光电生物传感和其他相关的光电探测应用中实现MoS2和其他层状半导体的具体优势尚不清楚。本文研究了平面二硫化钼光电探测器的光响应性和噪声特性。这项工作表明,与商用cd光电探测器相比,MoS2光电探测器具有更低的噪声等效功率(NEP)和探测率(D*)。此外,MoS2光电探测器的低频NEP和D*值与MoS2光活性层厚度有显著的相关性。我们确定了最佳的MoS2厚度范围为8-30 nm。我们还研究了优化后的MoS2光电探测器在几种不同波长下的光响应特性,这对临床比色分析很重要。优化后的光电探测器的最大光响应率为164.3 a /W,最小NEP为3.99 × 10−17 W/Hz1/2 (D*为5.01 × 1010 J),相对方差小于14%。这项工作为优化mos2基光电器件的光响应特性提供了有用的指导,这对实际的低频光电生物传感应用至关重要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Vacuum Science & Technology B
Journal of Vacuum Science & Technology B 工程技术-工程:电子与电气
自引率
14.30%
发文量
0
审稿时长
2.5 months
期刊介绍: Journal of Vacuum Science & Technology B emphasizes processing, measurement and phenomena associated with micrometer and nanometer structures and devices. Processing may include vacuum processing, plasma processing and microlithography among others, while measurement refers to a wide range of materials and device characterization methods for understanding the physics and chemistry of submicron and nanometer structures and devices.
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