Modeling of hot carrier degradation using a spherical harmonics expansion of the bipolar Boltzmann transport equation

M. Bina, K. Rupp, S. Tyaginov, O. Triebl, T. Grasser
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引用次数: 30

Abstract

Recent studies have clearly demonstrated that the degradation of MOS transistors due to hot carriers is highly sensitive to the energy distribution of the carriers. These distributions can only be obtained in sufficient detail by the simultaneous solution of the Boltzmann transport equation (BTE) for both carrier types. For predictive simulations, the energy distributions have to be thoroughly resolved by including the fullband structure, impact ionization (II), electron electron scattering (EE), as well as the interaction of minority carriers with the majority carriers. We demonstrate that this challenging problem can be efficiently tackled using a deterministic approach based on the spherical harmonics expansion (SHE) of the BTE.
利用双极玻尔兹曼输运方程的球谐展开模拟热载流子降解
近年来的研究清楚地表明,热载流子引起的MOS晶体管的退化对载流子的能量分布高度敏感。这些分布只能通过同时解两种载流子类型的玻尔兹曼输运方程(BTE)来获得足够详细的信息。对于预测模拟,能量分布必须通过包括全带结构、冲击电离(II)、电子电子散射(EE)以及少数载流子与多数载流子的相互作用来彻底解决。我们证明了这个具有挑战性的问题可以有效地解决使用确定性的方法基于球面谐波展开(SHE)的BTE。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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