Ultra-thin-body fully depleted SOI metal source/drain n-MOSFETs and ITRS low-standby-power targets through 2018

Abstract

Simulations of metal (Schottky) source/drain (S/D) ultra-thin-body fully depleted SOI n-channel MOSFETs, single and dual gate, were performed using parameters associated with ITRS LSTP targets for 2006 through 2018. By optimizing S/D-to-channel underlap for a given S/D barrier height, off-current can be reduced to match the ITRS LSTP specification for each year. ITRS on-current targets then establish limits on the S/D barrier height