A study on laser-assisted bonding (LAB) and its influence on luminescence characteristics of blue and YAG phosphor encapsulated InGaN LEDs

Matthias Fettke, Andrej Kolbasow, Vinith Bejugam, Timo Kubsch, Alexander Frick, T. Teutsch, Yu-Chung Wang, J. Rantala
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引用次数: 3

Abstract

This work is a sincere attempt to answer the question whether laser assisted bonding (LAB) is a feasible method for producing stable and reliable solder interconnections of LED devices without any negative impact on the LED chip performance. To meet these requirements, a bonding process was evaluated that induces marginal thermal and mechanical loads into the LED chip to prevent any changes in the quantum well (QW) structure. The bonding process uses a LAB "LaPlace" system with a 280W Q-CW solid-state, near infrared (NIR) laser source.By varying the laser parameters, the functionality of the bonded LED was characterized and a suitable process window, along with the corresponding energy threshold, was examined for the chosen LED configuration. A 700μm thick copper lead-frame test substrate was selected, and subjected to AgNi metallization. Furthermore, InGaN blue LED test chips (type EDI-FA445B) with 150μm pad-to-pad spacing, and 3μm SnAu 20/80 solder connections were used. Overall, this study compares a non-encapsulated LED version to an encapsulated (NYAG4454-L) one.To determine a suitable LAB process window, metallurgical properties of the soldered interface were examined microscopically by polishing a cross-section on the one hand, and conducting electrical qualification on the other. The mechanical load capacity was measured with a shear test unit, and the corresponding metallurgical fractures were optically inspected. The optical spectrum of the LED after bonding was studied with a "spectroradiometer" to identify shifts in the wavelength corresponding to electroluminescent emissions peaks. The impact of a "thermal-test" on the bonding quality was further evaluated. Additionally, the interface quality was correlated with the performance data in relation to LAB bonding parameters.Finally, this work introduces a laser assisted rework process i.g. laser assisted de-bonding (LAdB) for the de-bonding of faulty LEDs. The future prospects of intended reliability and stability for LED placement as well as a skillful approach for rapid, laser-assisted placement of mini- and micro-LEDs using the "LaPlace" systems are elucidated.
激光辅助键合(LAB)及其对蓝色和YAG荧光粉封装InGaN led发光特性影响的研究
这项工作是一个真诚的尝试来回答这个问题,激光辅助键合(LAB)是否是一种可行的方法来生产稳定可靠的焊接互连的LED器件,而不会对LED芯片的性能产生任何负面影响。为了满足这些要求,研究人员评估了一种键合工艺,该工艺可以在LED芯片中引入边际热载荷和机械载荷,以防止量子阱(QW)结构发生任何变化。键合过程使用LAB“拉普拉斯”系统和280W Q-CW固态近红外(NIR)激光源。通过改变激光参数,表征了键合LED的功能,并对所选LED配置的合适工艺窗口以及相应的能量阈值进行了检查。选择了700μm厚的铜铅框测试衬底,进行了AgNi金属化处理。此外,还采用了板间距为150μm的InGaN蓝色LED测试芯片(edii - fa445b型)和3μm SnAu 20/80焊点连接。总体而言,本研究比较了未封装的LED版本和封装的(NYAG4454-L)版本。为了确定合适的LAB工艺窗口,通过一方面抛光截面,另一方面进行电气鉴定,从微观上检查了焊接界面的冶金性能。采用剪切试验装置测量了试件的机械承载能力,并对相应的金相断口进行了光学检测。用“光谱辐射计”研究了LED键合后的光谱,以确定电致发光发射峰对应波长的偏移。进一步评估了“热测试”对粘接质量的影响。此外,界面质量与与LAB键合参数相关的性能数据相关。最后,本工作介绍了一种激光辅助返工工艺,即激光辅助脱键(LAdB),用于故障led的脱键。阐述了LED放置的可靠性和稳定性的未来前景,以及使用“拉普拉斯”系统快速,激光辅助放置微型和微型LED的熟练方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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