Comprehensive and easy to use SEM analysis structures for BiCMOS process development

S. Leibiger
{"title":"Comprehensive and easy to use SEM analysis structures for BiCMOS process development","authors":"S. Leibiger","doi":"10.1109/ASMC.2002.1001639","DOIUrl":null,"url":null,"abstract":"A comprehensive, yet easily used, set of SEM analysis structures is presented. These are currently being used in the development of a 0.35 micron, three layer metal, BiCMOS process flow. A summary list of the structure types and arrangements, key design considerations, SEM photographic results, and recommendations for improvement are included. A key design feature, a unique device navigation system allowing quick and accurate location of any particular structure is explained. Without such a feature, analysis would be difficult due to the large number, lateral size, and similarity of the various constructions.","PeriodicalId":64779,"journal":{"name":"半导体技术","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"半导体技术","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ASMC.2002.1001639","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

A comprehensive, yet easily used, set of SEM analysis structures is presented. These are currently being used in the development of a 0.35 micron, three layer metal, BiCMOS process flow. A summary list of the structure types and arrangements, key design considerations, SEM photographic results, and recommendations for improvement are included. A key design feature, a unique device navigation system allowing quick and accurate location of any particular structure is explained. Without such a feature, analysis would be difficult due to the large number, lateral size, and similarity of the various constructions.
全面和易于使用的SEM分析结构,用于BiCMOS工艺开发
提出了一套全面而又易于使用的SEM分析结构。这些目前正在用于开发一种0.35微米、三层金属的BiCMOS工艺流程。包括结构类型和安排,关键设计考虑因素,扫描电镜照片结果和改进建议的摘要列表。一个关键的设计特点,一个独特的设备导航系统,允许快速和准确地定位任何特定的结构。如果没有这样的特征,由于数量众多,横向大小和各种结构的相似性,分析将是困难的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
8436
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信