CMOS and interconnect reliability bias-temperature instability and interface traps

Abstract

This Session includes six papers describing recent advances in the understanding and characterization of Bias-Temperature Instability and Interface Traps. The first paper, by D. Varghese (IIT Bombay), shows the importance of time delay in NBTI measurements. The authors argue that short time and long time degradation are respectively dispersive and Arrhenius-like. The second paper, by A. T. Krishnan (Texas Instruments), discusses the material dependence of hydrogen diffusion and its impact on NBTI degradation. The effect of the measurement delay and the role of NBTI degradation at different frequencies are also studied.