Record RF performance of sub-46 nm L/sub gate/ NFETs in microprocessor SOI CMOS technologies

Sungjae Lee, L. Wagner, B. Jagannathan, S. Csutak, J. Pekarik, M. Breitwisch, R. Ramachandran, G. Freeman
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引用次数: 40

Abstract

We report record RF FET performance in 65 and 90-nm silicon-on-insulator (SOI) CMOS technologies featuring measured gate lengths from 27 to 43 nm and analyze factors contributing to that performance. The effect of layout and geometry optimization as well as channel length scaling is investigated to improve RF performance, namely fT, and fMAX. A peak fT of 330 GHz is measured in a fully-wired 65-nm NFET. A complete de-embedding method to accurately determine RF characteristics of the intrinsic 90-nm SOI NFET results in a peak fT of 290 GHz and an fMAX of 450 GHz
在微处理器SOI CMOS技术中记录sub- 46nm L/sub栅极/ nfet的射频性能
我们报告了65 nm和90 nm绝缘体上硅(SOI) CMOS技术的射频场效应管性能记录,其栅极长度为27至43 nm,并分析了影响该性能的因素。研究了布局和几何优化以及通道长度缩放对提高射频性能的影响,即fT和fMAX。在全有线65nm NFET中测量到的峰值fT为330 GHz。采用完整的去嵌入方法精确测定90 nm SOI NFET的射频特性,其峰值fT为290 GHz, fMAX为450 GHz
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