High density and high speed SRAM bit-cells and ring oscillators due to laser annealing for 45nm bulk CMOS

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. Pub Date : 2005-12-05 DOI:10.1109/IEDM.2005.1609438

A. Pouydebasque, B. Dumont, S. Denorme, F. Wacquant, M. Bidaud, C. Laviron, A. Halimaoui, C. Chaton, J. Chapon, P. Gouraud, F. Leverd, H. Bernard, S. Warrick, D. Delille, K. Romanjek, R. Gwoziecki, N. Planes, S. Vadot, I. Pouilloux, F. Arnaud, F. Boeuf, T. Skotnicki

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引用次数: 16

Abstract

In this work, we report on the integration of 30nm gate length CMOS devices fabricated using laser spike annealing (LSA). Considerably improved short channel effects and drive current (+10% I_on at constant I_off for NMOS) are demonstrated on samples using LSA. Excellent I_onI_off characteristics (I_on = 940 muA/mum I_off = 200 muA/mum for NMOS and I_on = 390muA/mum I_off = 50 nA/mum for PMOS at V_dd = 1 V) are measured that are at the leading edge of the state of the art. Moreover, an enhanced dynamic behavior (-6% in ring oscillator delay) and improved characteristics of high density SRAM bit-cells (+24% I_cell for the same 1_sb) are reported. These results demonstrate the potential of LSA in the perspective of 30 nm device integration of a 45 nm bulk CMOS platform

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基于45nm块体CMOS激光退火的高密度高速SRAM位单元和环形振荡器

在这项工作中，我们报道了用激光尖峰退火(LSA)制造的30nm栅长CMOS器件的集成。在使用LSA的样品上演示了显著改善的短通道效应和驱动电流(NMOS恒定关断时+10%离子)。优异的电离特性(在Vdd = 1 V时，NMOS的离子= 940 μ a / μ m off = 200 μ a / μ m, PMOS的离子= 390μ a / μ m off = 50 nA/ μ m)处于当前技术的前沿。此外，还报道了高密度SRAM位单元的动态特性增强(环形振荡器延迟-6%)和特性改进(相同1sb +24% Icell)。这些结果证明了LSA在45纳米体CMOS平台的30纳米器件集成方面的潜力

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IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.

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