T. Sanuki, H. Tanaka, K. Oota, O. Fujii, R. Yamaguchi, K. Nakayama, Y. Morimasa, Y. Takasu, J. Idebuchi, N. Nishiyama, H. Fukui, H. Yoshimura, K. Matsuo, I. Mizushima, H. Ito, Y. Takegawa, M. Saito, M. Iwai, N. Nagashima, F. Matsuoka
{"title":"New stress inducing technique of epitaxial si on recessed S/D fabricated in substrate strained-si of [100]channel on rotated wafers","authors":"T. Sanuki, H. Tanaka, K. Oota, O. Fujii, R. Yamaguchi, K. Nakayama, Y. Morimasa, Y. Takasu, J. Idebuchi, N. Nishiyama, H. Fukui, H. Yoshimura, K. Matsuo, I. Mizushima, H. Ito, Y. Takegawa, M. Saito, M. Iwai, N. Nagashima, F. Matsuoka","doi":"10.1109/IEDM.2005.1609391","DOIUrl":null,"url":null,"abstract":"For the first time, a novel CMOSFET structure in substrate strained-Si of lang100rang-channel on rotated wafers is presented. Low Ge concentration (10%) of SiGe layer is used in order to suppress the Vth shift and the mobility reduction caused by high channel doping. We applied Si selective epitaxial growth on recessed S/D region in SiGe layer, which is effective to induce high tensile stress and reduce S/D resistance. In strained Si NMOS, 15% performance improvement is achieved. Moreover, additive stress by using tensile CESL can further improve the drive current. In strained Si PMOS, 25% performance improvement is achieved in both narrow and wide channel device","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"22 1","pages":"501-504"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609391","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
For the first time, a novel CMOSFET structure in substrate strained-Si of lang100rang-channel on rotated wafers is presented. Low Ge concentration (10%) of SiGe layer is used in order to suppress the Vth shift and the mobility reduction caused by high channel doping. We applied Si selective epitaxial growth on recessed S/D region in SiGe layer, which is effective to induce high tensile stress and reduce S/D resistance. In strained Si NMOS, 15% performance improvement is achieved. Moreover, additive stress by using tensile CESL can further improve the drive current. In strained Si PMOS, 25% performance improvement is achieved in both narrow and wide channel device
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