{"title":"Synthesis of Highly Ordered Si-Containing Fluorinated Block Copolymers","authors":"Jianuo Zhou, Xuemiao Li, H. Deng","doi":"10.2494/photopolymer.34.329","DOIUrl":null,"url":null,"abstract":"Series of Si-containing, especially polyhedral oligomeric silsesquioxane (POSS)-containing fluorinated block copolymers (BCPs), poly(styryl polyhedral oligomeric silsesquioxane)- block -poly(hepatafluorobutyl methacrylate) (PStPOSS- b -PHFBMA) were synthesized via living polymerizations. The flory-huggins parameter ( χ , at 150 ºC) of PStPOSS- b -PHFBMA BCP was 0.060. Highly ordered hexagonal domain with 13.2 nm d spacing was observed by small-angle X-ray scattering (SAXS) after 10 h 160 ºC annealing, exhibiting rough line patterns in scanning electron microscope (SEM). SiO 1.5 residue (13.7 wt%) still remained after 700 ºC sintering in thermal gravimetric analysis (TGA).","PeriodicalId":16810,"journal":{"name":"Journal of Photopolymer Science and Technology","volume":"426 1","pages":""},"PeriodicalIF":0.4000,"publicationDate":"2021-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Photopolymer Science and Technology","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.2494/photopolymer.34.329","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"POLYMER SCIENCE","Score":null,"Total":0}
引用次数: 0
Abstract
Series of Si-containing, especially polyhedral oligomeric silsesquioxane (POSS)-containing fluorinated block copolymers (BCPs), poly(styryl polyhedral oligomeric silsesquioxane)- block -poly(hepatafluorobutyl methacrylate) (PStPOSS- b -PHFBMA) were synthesized via living polymerizations. The flory-huggins parameter ( χ , at 150 ºC) of PStPOSS- b -PHFBMA BCP was 0.060. Highly ordered hexagonal domain with 13.2 nm d spacing was observed by small-angle X-ray scattering (SAXS) after 10 h 160 ºC annealing, exhibiting rough line patterns in scanning electron microscope (SEM). SiO 1.5 residue (13.7 wt%) still remained after 700 ºC sintering in thermal gravimetric analysis (TGA).
期刊介绍:
Journal of Photopolymer Science and Technology is devoted to the publication of articles on the scientific progress and the technical development of photopolymers.