An integrated methodology for accurate extraction of S/D series resistance components in nanoscale MOSFETs

Seong-Dong Kim, S. Narasimha, K. Rim
{"title":"An integrated methodology for accurate extraction of S/D series resistance components in nanoscale MOSFETs","authors":"Seong-Dong Kim, S. Narasimha, K. Rim","doi":"10.1109/IEDM.2005.1609291","DOIUrl":null,"url":null,"abstract":"A new integrated methodology for the accurate extraction of source/drain (S/D) series resistance components with emphasis on the spreading and contact resistance elements is presented. For the first time, detailed extractions of lateral extension doping abruptness and silicide specific contact resistance are made directly from 90nm-node SOI MOSFET characterization. The spreading resistance due to the lateral doping gradient is found to be a key component contributing to total parasitics, and the doping gradient engineering and scaling of specific contact resistance must be employed to overcome this parasitic limitation in future nanoscale CMOS performance roadmap","PeriodicalId":13071,"journal":{"name":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","volume":"8 1","pages":"149-152"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2005.1609291","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28

Abstract

A new integrated methodology for the accurate extraction of source/drain (S/D) series resistance components with emphasis on the spreading and contact resistance elements is presented. For the first time, detailed extractions of lateral extension doping abruptness and silicide specific contact resistance are made directly from 90nm-node SOI MOSFET characterization. The spreading resistance due to the lateral doping gradient is found to be a key component contributing to total parasitics, and the doping gradient engineering and scaling of specific contact resistance must be employed to overcome this parasitic limitation in future nanoscale CMOS performance roadmap
一种精确提取纳米mosfet中S/D串联电阻元件的集成方法
提出了一种精确提取源/漏(S/D)串联电阻分量的综合方法,重点分析了扩展电阻和接触电阻。首次从90nm节点SOI MOSFET表征中直接详细提取了横向延伸掺杂突起性和硅化物比接触电阻。由于横向掺杂梯度引起的扩展电阻是导致总寄生的关键因素,在未来的纳米级CMOS性能路线图中,必须采用掺杂梯度工程和比接触电阻的缩放来克服这种寄生限制
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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