Effect of the temperature on the strain distribution induced in silicon interposer by TSVs: A comparison between micro-Laue and monochromatic nanodiffraction

Abstract

TSV-induced stress is extensively studied in silicon interposer by using two different submicron resolution X-ray diffraction techniques. Simulations are performed to interpret the experimental strain results. Stress and strain in silicon are found to be small at room temperature, while measurements and simulations at annealing temperature (400 °C) support a plastic behavior of copper in some regions of the TSV.